Tabel Persamaan Persamaan Fet

Transistor

( Marking Number: TK7A65D - K7A65D )Description:Applications1. Low drain-source ON-resistance: RDS (ON)= 0.8 Ω(typ.)2.

Tabel Persamaan Transistor

Tabel persamaan persamaan fet indonesiaTabel Persamaan Persamaan Fet

High forward transfer admittance: Yfs = 4.5 S (typ.)3. Low leakage current: IDSS= 10 μA (max) (VDS= 650 V)4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)PinoutAbsolute Maximum Ratings1. Drain-source voltage: VDSS = 650 V2. Gate-source voltage: VGSS = ±30 V3. Drain current: Id = 7 A4.  Packet tracer network simulation download. Drain power dissipation: Pd = 45 W K7A65D Datasheet PDFOther data sheets within the file: TK7A65D, TK7A650 Related articles across the web.